BDW63, BDW63a, BDW63b, BDW63c, BDW63d npn silicon power darlingtons product information 1 august 1978 - revised march 1997 copyright ? 1997 power innovations limited, u k information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters . l designed for complementary use with bdw64, bdw64a, bdw64b, bdw64c and bdw64 d l 60 w at 25c case temperatur e l 6 a continuous collector curren t l minimum h f e of 750 at 3 v, 2 a b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3 absolute maximum ratings at 25c case temperature (unless otherwise noted ) notes: 1. these values apply when the base-emitter diode is open circuited . 2. derate linearly to 150c case temperature at the rate of 0.48 w/c . 3. derate linearly to 150c free air temperature at the rate of 16 mw/c . 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on ) = 5 ma, r b e = 100 w , v be(off ) = 0, r s = 0. 1 w , v c c = 20 v . ratin g symbo l valu e uni t collector-base voltage ( i e = 0 ) BDW63 BDW63a BDW63b BDW63c BDW63 d v cb o 45 60 80 100 12 0 v collector-emitter voltage ( i b = 0) (see note 1 ) BDW63 BDW63a BDW63b BDW63c BDW63 d v ce o 45 60 80 100 12 0 v emitter-base voltag e v e b 5 v continuous collector curren t i c 6 a continuous base curren t i b 0. 1 a continuous device dissipation at (or below) 25c case temperature (see note 2 ) p to t 6 0 w continuous device dissipation at (or below) 25c free air temperature (see note 3 ) p to t 2 w unclamped inductive load energy (see note 4 ) ?l i c 2 5 0 m j operating junction temperature rang e t j -65 to +15 0 c operating temperature rang e t st g -65 to +15 0 c operating free-air temperature rang e t a -65 to +15 0 c
BDW63, BDW63a, BDW63b, BDW63c, BDW63 d npn silicon power darlington s 2 august 1978 - revised march 199 7 product information notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2% . 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts . ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters . electrical characteristics at 25c case temperatur e (unless otherwise noted ) paramete r test condition s mi n ty p ma x uni t v (br)ce o collector-emitter breakdown voltag e i c = 30 m a i b = 0 (see note 5 ) BDW63 BDW63a BDW63b BDW63c BDW63 d 45 60 80 100 12 0 v i ce o collector-emitter cut-off curren t v c e = 30 v v c e = 30 v v c e = 40 v v c e = 50 v v c e = 60 v i b = 0 i b = 0 i b = 0 i b = 0 i b = 0 BDW63 BDW63a BDW63b BDW63c BDW63 d 0.5 0.5 0.5 0.5 0. 5 m a i cb o collector cut-off curren t v c b = 45 v v c b = 60 v v c b = 80 v v c b = 100 v v c b = 120 v v c b = 45 v v c b = 60 v v c b = 80 v v c b = 100 v v c b = 120 v i e = 0 i e = 0 i e = 0 i e = 0 i e = 0 i e = 0 i e = 0 i e = 0 i e = 0 i e = 0 t c = 150c t c = 150c t c = 150c t c = 150c t c = 150 c BDW63 BDW63a BDW63b BDW63c BDW63d BDW63 BDW63a BDW63b BDW63c BDW63 d 0.2 0.2 0.2 0.2 0.2 5 5 5 5 5 m a i eb o emitter cut-off curren t v e b = 5 v i c = 0 2 m a h f e forward current transfer rati o v c e = 3 v v c e = 3 v i c = 2 a i c = 6 a (see notes 5 and 6 ) 750 10 0 20000 v be(on ) base-emitter voltag e v c e = 3 v i c = 2 a (see notes 5 and 6 ) 2. 5 v v ce(sat ) collector-emitter saturation voltag e i b = 12 ma i b = 60 m a i c = 2 a i c = 6 a (see notes 5 and 6 ) 2.5 4 v v e c parallel diode forward voltag e i e = 6 a i b = 0 3. 5 v thermal characteristic s paramete r mi n ty p ma x uni t r q j c junction to case thermal resistanc e 2.0 8 c/ w r q j a junction to free air thermal resistanc e 62. 5 c/ w resistive-load-switching characteristics at 25c case temperatur e paramete r test conditions ? mi n ty p ma x uni t t o n turn-on tim e i c = 3 a v be(off ) = -4.5 v i b(on ) = 12 ma r l = 10 w i b(off ) = -12 ma t p = 20 m s, dc 2 % 1 s t of f turn-off tim e 5 s
3 august 1978 - revised march 1997 BDW63, BDW63a, BDW63b, BDW63c, BDW63d npn silicon power darlingtons product information typical characteristic s figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 05 10 10 h fe - typical dc current gain 40000 100 1000 10000 tcs120ad t c = -40c t c = 25c t c = 100c v ce = 3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a 05 10 10 v ce(sat) - collector-emitter saturation voltage - v 0 05 10 15 20 tcs120ae t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a 05 10 10 v be(sat) - base-emitter saturation voltage - v 05 10 15 20 25 30 tcs120af t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
BDW63, BDW63a, BDW63b, BDW63c, BDW63 d npn silicon power darlington s 4 august 1978 - revised march 199 7 product information maximum safe operating region s figure 4. thermal informatio n figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 01 10 10 sas120ac BDW63 BDW63a BDW63b BDW63c BDW63d maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis120ab
BDW63, BDW63a, BDW63b, BDW63c, BDW63 d npn silicon power darlington s 5 august 1978 - revised march 199 7 product information to-220 3-pin plastic flange-mount packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . mechanical dat a to220 all linear dimensions in millimeters ? 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see note c see note b 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 version 2 version 1 notes: a. the centre pin is in electrical contact with the mounting tab. b. mounting tab corner profile according to package version. c. typical fixing hole centre stand off height according to package version. version 1, 18.0 mm. version 2, 17.6 mm. mdxxbe
BDW63, BDW63a, BDW63b, BDW63c, BDW63 d npn silicon power darlington s 6 august 1978 - revised march 199 7 product information important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements . pi accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used . pi semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 1997, power innovations limite d
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